%0 Journal Article
%4 dpi.inpe.br/plutao/2012/11.28.15.12
%2 dpi.inpe.br/plutao/2012/11.28.15.12.41
%@doi 10.4028/www.scientific.net/MSF.717-720.197
%F lattes: 4359261479122193 6 MedeirosPPFSSSMM:2012:SiThFi
%T SixCy Thin Films Deposited at Low Temperature by Dual DC Magnetron Sputtering:Effect of Power Supplied to Si and C Cathode Targets on Film Physicochemical Properties
%D 2012
%9 journal article
%A Medeiros, Henrique Souza,
%A Pessoa, Rodrigo Savio,
%A Sagás, J. C.,
%A Fraga, Mariana A,
%A Santos, Lúcia Vieira,
%A Silva Sobrinho, Argemiro S da,
%A Massi, Marcos,
%A Maciel, Homero S.,
%@affiliation Instituto Tecnológico de Aeronáutica (ITA)
%@affiliation Instituto Tecnológico de Aeronáutica (ITA)
%@affiliation Instituto Tecnológico de Aeronáutica (ITA)
%@affiliation Instituto Tecnológico de Aeronáutica (ITA)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Tecnológico de Aeronáutica (ITA)
%@affiliation Instituto Tecnológico de Aeronáutica (ITA)
%@affiliation Instituto Tecnológico de Aeronáutica (ITA)
%@electronicmailaddress henrique_sm_@hotmail.com
%@electronicmailaddress rodrigopessoa@gmail.com
%@electronicmailaddress jcsagas@pop.com.br
%@electronicmailaddress mafraga@ita.br
%@electronicmailaddress lucia.vieira@univap.br
%@electronicmailaddress argemiro@ita.br
%@electronicmailaddress massi@ita.br
%@electronicmailaddress homero@ita.br
%B Materials Science Forum. Silicon Carbide and Releted Material Book Series
%V 717 - 720
%N PTS 1 AND 2
%P 197-201
%K Chemistry Analysis, DC Dual Magnetron Sputtering, FilmStoichiometry, Low Temperature Deposition, Silicon Carbide Thin Films.
%X A DC dual magnetron sputtering system with graphite (C) and silicon (Si) targets was used to grow stoichiometric and non-stoichiometric silicon carbide (SixCy) thin films at low temperature. Two independently DC power sources were used to enable the total discharge power be shared, under certain proportions, between the Si and C magnetron cathodes. The motivation was to control the sputtering rate of each target so as to vary the stoichiometric ratio x/y of the deposited films. The species content, thickness and chemical bonds of as-deposited SixCy films were studied by Rutherford backscattering spectroscopy (RBS), profilometry analysis and Fourier transform infrared absorption (FTIR), respectively. Overall, the present work reveals a new reliable plasma sputtering technique for low temperature growth of amorphous SixCy thin films with the capability of tuning the degree of formation of a-SiC, a-Si and a-C bonds in the film bulk.
%@language en
%3 medeiros_sixcy.pdf
%O 14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011) Location: Cleveland, OH Date: SEP 11-16, 2011